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IPB180N03S4L-01 Datasheet
Datasheet specifications
| Datasheet's name | IPB180N03S4L-01 |
|---|---|
| File size | 60.952 KB |
| File type | |
| Number of pages | 9 |
Download Datasheet IPB180N03S4L-01 |
Download Datasheet |
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Other documentations
No other documentation was found!
Technical specifications
- RoHS: true
- Type: -
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Infineon Technologies IPB180N03S4L-01
- Power Dissipation (Pd): -
- Total Gate Charge (Qg@Vgs): -
- Drain Source Voltage (Vdss): -
- Input Capacitance (Ciss@Vds): -
- Continuous Drain Current (Id): -
- Gate Threshold Voltage (Vgs(th)@Id): -
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): -
- Package: TO-263-7
- Manufacturer: Infineon Technologies
